Abstract— In recent years, the wide-bandgap Silicon-Carbide (SiC) MOSFET is proposed as a solution to considerably reduce power losses in power transistor switches. This paper presents an improved single-equation temperature-dependent DC model for SiC MOSFET. Using one equation, the proposed model avoids the problems of continuities at the high order derivatives of the drain current at the transition regions encountered in the piece-wise transistor models. In addition, all peculiar features observed in the experimental I-V characteristics of the SiC MOSFET are perfectly reproduced by the model, namely: i) the moderate inversion region, or region of low drain current observed at low gate voltage, ii) the gradual increase of drain current from linear to saturation region and  pinch-off region noticed in the output characteristics and iii) the quasi-saturation effect, which appears at high gate voltage by a less sensitivity of the drain current to the rise in gate voltage compared to classical saturation. The advantage of the proposed model – over the existing single-equation SiC models – is the independence of its parameters against bias voltages, manufacturer process and technology. Simple and efficient parameter extraction method is provided using an optimizer algorithm with good initial parameter values. The model’s scalability with temperature is ensured through its temperature-dependent parameters. Validity of the proposed model is executed through its comparison with CoolSiC trench MOSFET, TCAD simulation and measurement. Excellent agreement is acheived, confirming that the proposed model can be implemented in circuit simulators to represent the SiC MOSFET devices.